, l/ nc. 20 stern ave. springfield, new jersey 07081 u.s.a. n-channel jfets telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 j/sst/u308 series j308 sst308 u309 j309 sst309 U310 j310 sst310 product summary part number j308 j309 j310 sst308 sst309 sst310 u309 U310 vosfoto (v) -1 to -6.5 -1 to -4 -2 to -6.5 -1 to -6.5 -1 to^l -2 to -6.5 -1 to -4 -2.5 to -6 v,br,gss min (v) -25 -25 -25 -25 -25 -25 -25 -25 gfsmin (ms) 8 10 8 8 10 8 10 10 loss mi" (ma) 12 12 24 12 12 24 12 24 features ? excellent high frequency gain: gps 11.5 db@ 450 mhz ? very low noise: 2.7 db @ 450 mhz ? very low distortion ? high ac/dc switch off-isolation benefits ? wideband high gain ? very high system sensitivity ? high quality of amplification ? high-speed switching capability ? high low-level signal amplification applications ? high-frequency amplifier/mixer ? oscillator ? sample-and-hold ? very low capacitance switches description the j/sst/u308 series offers superb amplification characteristics. of special interest is its high-frequency performance. even at 450 mhz, this series offers high power gain at low noise. low-cost j series to-226aa (to-92) packaging supports automated assembly with tape-and-reel options. the sst series to-236 (sot-23) package provides surface-mount capabilities and is available with tape-and-reel options. the u series hermetically-sealed to-206ac (to-52) package supports full military processing. (see military and packaging information for further details.) for similar dual products packaged in the to-78, see the u430/431 data sheet. to-226aa (to-92) to-236 (sot-23) top view sst308 (z8)" sst309 (z9)* sst310 (zo)* "marking code for to-236 to-206ac (to-52) g and case nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
absolute maximum ratings gate-drain, gate-source voltage -25 v gate current : (j/sst prefixes) .................... 10 ma (u prefix) .......................... 20 ma lead temperature (v^" from case for 10 sec.) ................... 300c storage temperature : (j/sst prefixes) .............. -55 to 150c (u prefix) .................... -65 to 175c operating junction temperature -55 to 150"c power dissipation : (j/sst prefixes)3 350 mw (u prefix)" 500 mw notes a. derate 2.8 mw/c above 25c b. derate 4 mw/c above 25 c specifications for j/sst308, j/sst309 and j/sst310 (ta = 25 c unless noted) parameter symbol test conditions typa limits j/sst308 min max j/sst309 min max j/sst310 min max unit static gate-source breakdown voltage gate-source cutoff voltage saturation drain current gate reverse current gate operating current drain-source on-resistance gate-source forward voltage v(br)gss vgs(off) bss igss ig rds(on) vos(f) ig = -1 ma , vds = 10v vds = 10v, vgs = -15v vds = 0 v id = 1 na vgs = 0 v , vds = 0 v ta=125c vdg = 9v, id = 10ma vgs = 0 v, d = 1 ma ig = 10ma vds = 0 v dynamic common-source forward transconductance common-source output conductance common-source input capacitance common-source reverse transfer capacitance equivalent input noise voltage qfs 9os ciss crss en vds=10 v, f=1 vds =10 \ = 1 mhz j -35 -0.002 -0.001 -15 35 0.7 -25 -1 12 -6.5 60 -1 -1 1 -25 -1 12 -4 30 -1 -1 1 -25 -2 24 -6.5 60 -1 -1 1 v v ma na ua pa q v id = 10ma khz t j j sst j sst vds = 10 v, b = 10ma f = 100 hz 14 110 4 4 1.9 1.9 6 8 250 5 2.5 10 250 5 2.5 8 250 5 2.5 ms us pf nv/ vhz high frequency common-gate forward transconductance common-gate output conductance common-gate power gainc noise figure 9fg 9og gpg nf vds =10 v id = 10 ma f= 105 mhz f = 450 mhz f = 105mhz f = 450 mhz f = 105 mhz f = 450 mhz f = 105 mhz f = 450 mhz 14 13 0.16 0.55 16 11.5 1.5 2.7 ms db notes a. typical values are for design aid only, not guaranteed nor subject to production testing. b. pulse test: pw < 300 us duty cycle < 3%. c. gain (gpg) measured at optimum input noise match.
specifications for u309 and u31o (ta = 25 c unless noted) parameter symbol test conditions typa limits u309 min max U310 min max unit static gate-source breakdown voltage gate-source cutoff voltage saturation drain current gate reverse current gate operating current drain-source on-resistance gate-source forward voltage v(br)gss vcs(off) bss 'gss ig tds(on) vgs(f) ig = -1 ma , vds = 0 v vds = 10v, id = 1 na vds = iov, vos = ov vgs = -15v,vds = ov ta=125c vdg = 9v, id = 10ma vgs = 0 v, d = 1 ma ig = 10ma, vds = 0 v -35 -0.002 -0.001 -15 35 0.7 -25 ,4 12 -a 30 -0.15 -0.15 i -25 -2.5 24 -6 60 -0.15 0.15 i v v ma na ua pa h v dynamic common-source forward transconductance common-source output conductance common-source input capacitance common-source reverse transfer capacitance equivalent input noise voltage high frequency common-gate forward transconductance common-gate output conductance common-gate power gain0 noise figure 9f> 9os ciss crss en 9fg sog gw nf vds= 10 v, id = 10ma f = 1 khz vds = 10 v, vgs = -iov f=1 mhz vds =10 v, id = 10ma f = 100 hz 14 110 4 1.9 6 10 250 5 2.5 10 250 5 2.5 ms us pf nv/ vhz f= 105 mhz f = 450 mhz f= 105 mhz f = 450 mhz vn<= = 10 v id = 10ma f= 105 mhz f = 450 mhz f = 105mhz f = 450 mhz 14 13 0.16 0.55 16 11.5 1.5 2.7 14 10 2 3.5 14 10 2 3.5 ms db notes a. typical values are for design aid only, not guaranteed nor subject to production testing. b. pulse test: pw < 300 us duty cycle < 3%. c. gain (gpg) measured at optimum input noise match.
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